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Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN

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Abstract:

90 Shockley partial dislocations in GaN are investigated by first-principles calculations. This work is focussed on the electrical properties of dislocation cores, and on investigating the electrical fields around these defects. The band structure analysis shows that both the and core partials possess a midgap state. The -core dislocations give rise to a donor level Ev +0:87 eV that might explain the absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The acceptor level Ev + 1:11 eV localized at the -core dislocations might contribute to the yellow luminescence. These dislocations experience a substantial charge polarization along the [0001] growth axis. In addition, we show that these dislocations tend to charge in a high stress field.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1057

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Online since:

May 2005

Authors:

G. Savini, M.I. Heggie, C.P. Ewels, N. Martsinovich, R. Jones, A.T. Blumenau

Keywords:

Charge, Deep Level, Dislocation, Gallium Nitride (GaN), Yellow Luminescence

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] X.G. Qiu, Y. Segawa, Q. K. Xue, Q. Z. Xue, T. Sakurai, Appl. Phys. Lett. 77, 1316 (2000).

Google Scholar

[2] Hajime Fujikura, Kazuyuki, Satoru Tanaka, Jpn. J. Appl. Phys. 42, 2767 (2003).

Google Scholar

[3] A.T. Blumenau, C.J. Fall, J. Elsner, R. Jones, M.I. Heggie, T. Frauenheim, Phys. Stat. Sol. (c), No. 6, 16841709 (2003).

Google Scholar

[4] H.J. Im, Y. Ding, J.P. Pelz, B. Heying, J.S. Speck, Phys. Rev. Lett. 87, 106802 (2001).

Google Scholar

[5] P.R. Briddon, R. Jones, Phys. Status Solidi B 217), 131 (2000).

Google Scholar

[6] C.G. Van de Walle, J. Neugebauer, J. Appl. Phys 95, N. 8, 3851 (2004).

Google Scholar

[7] A. Guti´errez-Sosa, U. Bangert, A.J. Harvey, C.J. Fall, R. Jones, P.R. Briddon, M.I. Heggie Phys. Rev. B 66, 35302 (2002). This article was processed using the LATEX macro package with TTP style.

Google Scholar