Paper Titles
Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies
p.287
RBS-Channeling and EPR Studies of Damage in 2 MeV Al2+-Implanted 6H-SiC Substrates
p.291
Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy
p.295
Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
p.299
Pressure Effect on the Elastic Properties of SiC Polytypes
p.303
[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
p.307
XRDT Study of Structural Defects of 6H-SiC Crystals
p.311
Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
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PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
p.319

Pressure Effect on the Elastic Properties of SiC Polytypes

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Abstract:

The pressure dependences of the second-order elastic constants ij C and the velocity of sound in 3C-SiC and 2H-SiC crystals are calculated in the framework of the Keating model with the additional assumption that the central α and the noncentral β force constants are linear functions of external hydrostatic pressure. Grüneisen parameters for the different acoustic modes of 3C-SiC have been also calculated. The third –order elastic constants ijk C for 3C-SiC are determined from the dependences of ij C on the pressure.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

303-306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.303

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Online since:

May 2005

Authors:

Sergey Y. Davydov

Keywords:

Elastic Constant, Force Constants, Grüneisen Parameter, Hydrostatic Pressure, Polytype, Semi-Empirical Model, Silicon Carbide (SiC), Sound Velocity

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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