Ultra-Hard Nanostructured Al-Si Thin Films

Velimir Radmilović; D. Mitlin; U. Dahmen

doi:10.4028/www.scientific.net/MSF.494.13

Paper Titles

Preface

The Framework for Research and Technology Policies in Small Countries: The Case of Slovenia
p.1

Application of In Situ HREM to Study Crystallization in Materials
p.7

Ultra-Hard Nanostructured Al-Si Thin Films
p.13

Resonant Raman Scattering in Strained and Relaxed In_xGa_1-xN/GaN Multiple Quantum Wells
p.19

GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron – LO Phonon Transitions
p.25

Control of Optical Gain in the Active Region of Quantum Cascade Laser by Strong Perpendicular Magnetic Field
p.31

Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots
p.37

HEMT Carrier Mobility Analytical Model
p.43

HomeMaterials Science ForumMaterials Science Forum Vol. 494Ultra-Hard Nanostructured Al-Si Thin Films

Ultra-Hard Nanostructured Al-Si Thin Films

Abstract:

We show that it is possible to use high rate co-evaporation of Al and Si onto room temperature substrates to achieve a novel two-phase nanoscale microstructure. These nanocomposites have a hardness as high as 4GPa (Al-23at.%Si), and display noticeable plasticity. Films with compositions of Al-12at.%Si and pure Al (used as baseline) were analyzed using transmission electron microscopy (TEM). The scale of the Al-12at.%Si microstructure is an order of magnitude finer compared to that of pure Al films. It consists of a dense distribution of spherical nanoscale Si particles separating irregularly-shaped small Al grains. These new structures may have a mechanical performance advantage over conventional single phase nanomaterials due to the role of the dispersed hard phase in promoting strain hardening.