Paper Titles

Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells
p.139

Copper and Nickel Precipitation in a Σ=25 Silicon Bicrystal
p.145

Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films
p.151

Segregation and Precipitation of Platinum Silicides in Si/SiO₂ Interfaces and Dislocations
p.157

Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in Silicon
p.163

Local Grain Boundary Property Measurements
p.171

Local Investigation of the Electrical Properties of Grain Boundaries in Silicon
p.183

Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping
p.189

Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact
p.195

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Calculation of the Atomic and Electronic Structure...

Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors III

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

163-170

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.163

Citation:

Cite this paper

Online since:

March 1994

Authors:

Masanori Kohyama, S. Takeda

Keywords:

{113} Planar Defect, Interstitial Atom, Silicon, Stillinger-Weber Potential, Structural Unit, Transferable Semi-Empirical Tight-Binding Method

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: