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Grain Growth of ZnSe Recrystallized in the Solid Phase
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Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES
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Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
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Modification of Electronical and Optical Properties in SiO₂ Films by Electron Beam Irradiation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Lateral Doping Inhomogeneities as Revealed by...

Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

317-326

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.317

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Online since:

December 1998

Authors:

R.P. Mikalo, P. Hoffmann, Th. Heller, D. Schmeißer

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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