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Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

419-428

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.419

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Online since:

June 2003

Authors:

Hiroshi Mizuta, Yoshikazu Furuta, Toshio Kamiya, Yong-Tsong Tan, Zahid A.K. Durrani, K. Nakazato, Haroon Ahmed

Keywords:

Coulomb Blockade, Grain Boundary, Point Contact Transistor, Polycrystalline Silicon, Single-Electron Tunnelling

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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