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The Effect of Substrate Temperature on the Formation of ITO Thin Films

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Abstract:

Indium tin oxide (ITO) used in many applications such as electronic and optical devices were deposited on the soda lime glass substrate by an electron beam evaporation techniques from a mixture of 90wt% of In2O3 and 10wt% of SnO2. The physical, electrical and optical properties of the ITO films were determined as a function of substrate temperature. The films deposited at 200 showed optimum properties with a strong diffraction peak having a preferred orientation along the [111] direction. Experimental results showed that sheet resistance and transmittance of the ITO film increased with an increase in substrate temperature. Surface roughness increased slightly as a function of substrate temperature because of grain growth.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

195-198

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.195

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Online since:

June 2007

Authors:

Bum Rae Cho

Keywords:

Indium Tin Oxide (ITO), Substrate Temperature, Surface Roughness (SR), Transmittance

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] K.L. Chopra, S. Major and D.K. Pandya: Thin Solid Films, Vol. 102 (1983) p.1.

Google Scholar

[2] J.C. Manifacier: Thin Solid Films, Vol. 90 (1982) p.297.

Google Scholar

[3] F. Demichelis, E. Minetti-Mezzeti, V. Smurro, A. Tagliaferro and E. Tresso: J. Appl. Phys. Vol. 18 (1985) p.1825.

DOI: 10.1088/0022-3727/18/9/013

Google Scholar

[4] K. Sreenivas, T.S. Rao and A. Mansinh: J. Appl. Phys., Vol. 57 (1985) p.384.

Google Scholar

[5] Y. Shigesato, D.C. Paine and T.E. Hayens: J. Appl. Phys., Vol. 73 (1993) p.3805.

Google Scholar

[6] S.R. Ramanan: Thin Solid Films, Vol. 389 (2001) p.207.

Google Scholar

[7] J. Ederth, P. Heszler, A. Hultaker, G.A. Niklasson and C.G. Granqvist: Thin Solid Films, Vol. 445 (2003) p.199.

DOI: 10.1016/s0040-6090(03)01164-7

Google Scholar

[8] F. Benkheilfa, P.V. Vader, F.E. Girouard and Vo-Van Truong: Thin Solid Films, Vol. 232 (1993) p.83.

Google Scholar

[9] E. Buurstein: Physics, Vol. 93 (1954) p.632.

Google Scholar