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Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

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Abstract:

Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

263-266

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.263

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Online since:

June 2007

Authors:

Nam Hoon Kim, Gwon Woo Choi, Yong Jin Seo, Woo Sun Lee

Keywords:

Chemical-Mechanical Planarization (CMP), Indium Tin Oxide (ITO), Pad Conditioning

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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