Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties

Daniel Kropman; E. Mellikov; Tiit Kärner; Ü. Ugaste; Tony Laas; Ivo Heinmaa; U. Abru; Arthur Medvid

doi:10.4028/www.scientific.net/SSP.131-133.345

Paper Titles

Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces
p.321

Structure of Magnetically Ordered Si:Mn
p.327

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers
p.333

Defect Engineering for SIMOX Processing
p.339

Hydrogen Interaction with Point Defects in the Si-SiO₂ Structures and its Influence on the Interface Properties
p.345

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
p.351

Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
p.357

Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu
p.363

The Role of High Temperature Treatments in Stress Release and Defect Reduction
p.369

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Hydrogen Interaction with Point Defects in the Si-SiO₂ Structures and its Influence on the Interface Properties

Abstract:

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.