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Properties of Si:Cr Annealed under Enhanced Stress Conditions

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Abstract:

The effect of hydrostatic argon pressure equal to 105 Pa and 1.1 GPa applied to processing at up to 1270 K (HT) of Si:Cr samples prepared by Cr+ implantation (dose 1x1015 cm-2, 200 keV) into (001) oriented Czochralski silicon, has been investigated by Secondary Ion Mass Spectrometry, photoluminescence, X-ray and SQUID methods. Cr+ implantation at this energy and dosage produces amorphous silicon (a-Si) near the implanted ions range. Solid phase epitaxial re-growth (SPER) of a-Si takes place at HT. The Cr profile does not depend markedly on HP applied during processing at 723 K. Si:Cr processed at up to 723 K indicates magnetic ordering. Annealing under 105 Pa at 873 K, 1070 K and 1270 K results in a marked diffusion of Cr toward the sample surface. In the case of processing under 1.1 GPa this diffusion is less pronounced, SPER of a-Si is retarded and the a-Si/Si interface becomes enriched with Cr. The Cr concentration in Si:Cr sample processed at 1270 K under 1.1 GPa forms two distinct maxima, the deeper one at 0.35 μm depth.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

375-380

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.375

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Online since:

October 2007

Authors:

Andrzej Misiuk, Adam Barcz, Lee Chow, Barbara Surma, Jadwiga Bak-Misiuk, M. Prujszczyk

Keywords:

Annealing, Chromium, Czochralski Silicon, High-Pressure, Implantation, Magnetic Ordering, Solid Phase Epitaxial Regrowth (SPER), Structure

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] H. Francois-Saint-Cyr, E. Anoshkina, F. Stevie, L. Chow, K. Richardson, D.J. Zhou: J. Vac. Sci. Technol. B Vol. 19 (2001), p.1769.

DOI: 10.1116/1.1396638

Google Scholar

[2] N. Theodoropoulou, A.F. Hebard, M.E. Overberg, C.R. Abernathy, S.N. Pearton, N. Chu, R.G. Wilson: Appl. Phys. Lett. Vol. 78 (2001), p.3475.

DOI: 10.1063/1.1376659

Google Scholar

[3] M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M.B. Huang, F.G. Ramos, G. Agnello, V.P. LaBella: Phys. Rev. B Vol. 71 (2005), p.033302.

DOI: 10.1103/physrevb.71.033302

Google Scholar

[4] A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov: Mater. Sci. Semicond. Process. Vol. 9 (2006), p.270.

DOI: 10.1016/j.mssp.2006.01.048

Google Scholar

[5] P. Zhang, F. Stevie, R. Vanfleet, R. Neelakantan, M. Klimov, D. Zhou, L. Chow: J. Appl. Phys. Vol. 96 (2004), p.1053.

Google Scholar

[6] A. Misiuk, L. Chow, A. Barcz, B. Surma, J. Bak-Misiuk, P. Romanowski, W. Osinniy, F. Salman, G. Chai, M. Prujszczyk, A. Trojan, in: High Purity Silicon 9, edited by C.L. Claeys, R. Falster, M. Watanabe, P. Stallhofer, volume 3 no. 4 of ECS Transactions, The Electrochemical Society (2006).

DOI: 10.1149/1.2355780

Google Scholar

[7] A. Misiuk, B. Surma, J. Bak-Misiuk: Solid State Phen. Vol. 108-109 (2005), p.351.

DOI: 10.4028/www.scientific.net/ssp.108-109.351

Google Scholar

[8] G. Davies: Phys. Rep. Vol. 176 (1989), p.83.

Google Scholar

[9] A. Wolska, K. Lawniczak-Jablonska, M. Klepka, M.S. Walczak, A. Misiuk: Phys. Rev. B Vol. 75 (2007), p.113201.

Google Scholar

[10] A. Misiuk, J. Bak-Misiuk, B. Surma, W. Osinniy, M. Szot, T. Story, J. Jagielski: J. Alloys Comp. Vol. 423 (2006), p.201.

DOI: 10.1016/j.jallcom.2005.12.103

Google Scholar