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Nitrogen Centers in Nanodiamonds: EPR Studies

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Abstract:

Electron paramagnetic resonance (EPR) and electron spin echo (ESE) at X-band (9.4 GHz) and W-band (94 GHz) have been used to study defects in natural diamond nanocrystals, detonation nanodiamond (ND) with a size of  4.5 nm and detonation ND after high-pressure high-temperature (HTHP) sintering with a size of  8.5 nm. Based on identification of atomic nitrogen centers N0 and nitrogen pairs N2+ detected by means of the high frequency EPR and ESE in natural diamond nanocrystals, atomic nitrogen centers N0 have been discovered in nanodiamond core in detonation ND and detonation ND after sintering. In addition EPR signal of multi-vacancy centers with spin 3/2 seems to be observed in diamond core of detonation ND.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1239-1242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1239

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Online since:

April 2010

Authors:

Alexandra A. Soltamova, P.G. Baranov, Ivan V. Ilyin, A.Y. Vul', S.V. Kidalov, F.M. Shakhov, G.V. Mamin, N.I. Silkin, S.B. Orlinskii, M.K. Salakhov

Keywords:

Electron Paramagnetic Resonance (EPR), Electron Spin Echo, Nanocrystalline Diamond

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] X.W. Fang, J.D. Mao, E.M. Levin, K. Schmidt-Rohr, J. Am. Chem. Soc. Vol. 131 (2009), p.1426.

Google Scholar

[2] C.A.J. Ammerlaan, Paramagnetic centers in diamond, Landold-Boernstein New Series, Ed. By M. Schulz, Vol. III / 41A2α, Springer (2001), p.6.

Google Scholar

[3] A. Gruber, A. Draebenstedt, C. Tietz, L. Fleury, J. Wrachtrup, C. von Borczyskowski, Science Vol. 276 (1997), p. (2012).

Google Scholar

[4] D.D. Awschalom, R. Epstein, R. Hanson, Sci. Amer. Vol. 297 (2007), p.84.

Google Scholar

[5] A.S. Barnard, M. Sternberg, Diamond Relat. Mater. Vol. 16 (2007), p. (2078).

Google Scholar

[6] G.D. Watkins, Deep Centers in Semiconductors, Ed. by S.T. Pantelides, Gordon and Breach, New York (1986), p.147.

Google Scholar

[7] S.B. Orlinskii, J. Schmidt, P.G. Baranov, V. Lorrmann, I. Riedel, D. Rauh, V. Dyakonov, Phys. Rev. B Vol. 77 (2008), p.115334.

DOI: 10.1103/physrevb.77.115334

Google Scholar

[8] P.G. Baranov, I.V. Il'in, A.A. Soltamova, A. Ya. Vul', S.V. Kidalov, F.M. Shakhov, G.V. Mamin, S.B. Orlinskii, M. Kh. Salakhov, JETP Lett. Vol. 89 (2009), p.409.

DOI: 10.1134/s0021364009080074

Google Scholar

[9] N.D. Samsonenko, E.V. Sobolev, JETP Lett. Vol. 5 (1967), p.250.

Google Scholar

[10] A.I. Shames, A.M. Panich, W. Kempiski, A.E. Alexenskii, M.V. Baidakova, A.T. Dideikin, V. Yu. Osipov, V.I. Siklitski, E. Osawa, M. Ozawa, A. Ya. Vul', J. Phys. Chem. Solids Vol. 63 (2002), p. (1993).

DOI: 10.1016/s0022-3697(02)00185-3

Google Scholar

[11] R.P. Messmer, G.D. Watkins, Phys. Rev. B Vol. 7 (1973), p.2568 and references therein.

Google Scholar

[12] O.D. Tucker, M.E. Newton, J.M. Baker, Phys. Rev. B Vol. 50 (1994), p.15586.

Google Scholar