Paper Titles

Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon
p.1345

Optically Detected Cyclotron Resonance for Defect Characterization
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Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
p.1359

Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors
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Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
p.1371

Detection of Nonradiative Transition in P⁺⁺ Ion Implanted p-Si by a Photoacoustic Spectroscopy
p.1375

DLTS of Recombination Centres in Semiconductors
p.1381

Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
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A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
p.1391

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Observation of Rapid Direct Charge Transfer...

Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1371-1374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1371

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Online since:

October 1993

Authors:

A.M. Frens, M.T. Bennebroek, A.J. Zakrzewski, J. Schmidt, W.M. Chen, Erik Janzén, J. Lennart Lindström, Bo Monemar

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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