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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Equilibrium Vacancies in Te-Doped GaAs Studied by...

Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

905-910

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.905

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Online since:

December 1997

Authors:

J. Gebauer, Reinhard Krause-Rehberg, M. Lausmann, G. Lippold

Keywords:

Equilibrium Defects, Ga Vacancy, GaAs, Positron Annihilation, Post-Growth Annealing

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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