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Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
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Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

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Abstract:

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.233

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Online since:

May 2012

Authors:

Yi Yu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta K. Linnarsson, Satoshi Kamiyama, Zhao Yue Lu, Rositza Yakimova, Mikael Syväjärvi, Hai Yan Ou

Keywords:

6H-SiC, Donor-Acceptor Pair Emission, Photoluminescence (PL), Raman Microscopy, Sublimation Epitaxy

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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