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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

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Abstract:

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.

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Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

625-628

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.625

Citation:

Cite this paper

Online since:

May 2012

Authors:

Adrien Michon, Elodie Roudon, Marc Portail, Benoit Jouault, Sylvie Contreras, Sébastien Chenot, Yvon Cordier, Denis Lefebvre, Stephane Vézian, Marcin Zielinski, Thierry Chassagne, Jean Camassel

Keywords:

3C-SiC/Si, 6H-SiC, CVD, Graphen

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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