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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p1213 Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs   [ 246 K ]
  Authors: C. Ghezzi, E. Gombia, L. Vanzetti
• p1219 Donor Identification in Bulk Gallium Arsenide   [ 143 K ]
  Authors: T.D. Harris, M.S. Skolnick
• p1223 Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs   [ 216 K ]
  Authors: Zuzanna Liliental-Weber, Eicke R. Weber, N. Newman, W.E. Spicer, R. Gronsky, J. Washburn
• p1229 Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs   [ 449 K ]
  Authors: P. Bunod, E. Molva, A. Chabli, F. Bertin, J. Blétry, Le Si Dang
• p1235 Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals   [ 243 K ]
  Authors: J.A. Mareš, J. Oswald, J. Pastrňák
• p1241 Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg_1-x Cd_xTe by Positron Annihilation   [ 262 K ]
  Authors: B. Geffroy, C. Corbel, M. Stucky, R. Triboulet, Pekka J. Hautojärvi, F. Plazaola, Kimmo Saarinen, H. Rajainmäki, J. Aaltonen, P. Moser, A Sengupta, J.L. Pautrat
• p1247 Native Defects in β-Sic   [ 213 K ]
  Authors: P.J. Lin-Chung, Yu Zhu Li
• p1253 Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon   [ 219 K ]
  Authors: G.A. Northrop, G.S. Oehrlein
• p1259 Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous   [ 261 K ]
  Authors: Paul B. Klein, R.L. Henry, T.A. Kennedy, N.D. Wilsey
• p1265 Radiative Recombination Mechanism of Deep Levels in GaAs   [ 292 K ]
  Authors: Michio Tajima, Hiroshi Tanino, Koichi Ishida