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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

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• p589 Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon   [ 201 K ]
  Authors: V.P. Markevich, L.F. Makarenko, L.I. Murin
• p595 Heat-Treatment Centres and Thermal Donors in Silicon   [ 210 K ]
  Authors: T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan
• p601 The NL 10 Thermal Donor in Silicon   [ 171 K ]
  Authors: H.H.P.Th. Bekman, T. Gregorkiewicz, C.A.J. Ammerlaan
• p607 Endor Investigations on Heat Treatment Centers in Oxygen Rich Si   [ 209 K ]
  Authors: Jürgen Michel, N. Meilwes, Johann Martin Spaeth
• p613 Thermal Donor Formation in Boron Doped Silicon   [ 241 K ]
  Authors: M. Claybourn, R.C. Newman
• p619 The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in Silicon   [ 211 K ]
  Authors: J.A. Griffin, J. Hartung, Joerg Weber
• p625 Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon   [ 249 K ]
  Authors: S. Biernacki, Udo Scherz, R. Gillert, Matthias Scheffler
• p631 Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements   [ 297 K ]
  Authors: Achim Dörnen, R. Sauer, Gerhard Pensl
• p637 Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si: O   [ 266 K ]
  Authors: Hiroshi Yamada-Kaneta, C. Kaneta, Tomoya Ogawa, K. Wada
• p643 Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon   [ 279 K ]
  Authors: Manfred Reiche, J. Reichel
• p649 Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon   [ 263 K ]
  Authors: D. Mathiot
• p655 Atomic Geometry and Its Stability of Oxygen Impurities in Silicon   [ 253 K ]
  Authors: M. Saito, Atsushi Oshiyama
• p661 Formation of Oxide Precipitates in Cz Grown Silicon   [ 164 K ]
  Authors: J. Seres, Erzsébet Hild
• p667 New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C   [ 293 K ]
  Authors: K. Schmalz, K. Tittelbach, Valentin V. Emtsev, Yu.N. Daluda
• p673 Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C   [ 243 K ]
  Authors: Y. Kamiura, Fumio Hashimoto, M. Yoneta