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Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus
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A FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAs
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Electronic Structure of Be-Doped GaAs
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High Resolution Magneto-Optical Studies of the Donors in MOCVD InP
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Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs
p.381
The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy
p.389
Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs Heterostructures
p.397
Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs
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Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs
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Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

381-388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.381

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Online since:

January 1991

Authors:

P.D. Wang, S.N. Holmes, R.A. Stradling, R. Droopad, Ian T. Ferguson, A. d'Oliveira, S.D. Parker, R.L. Williams

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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