Paper Titles

Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
p.67

Photoluminescence and Excitation Study of Delta Doped GaAs
p.73

Shallow Impurity Bands in δ-Doped Quantum Wells
p.79

Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs
p.83

Bound Excitons in Quantum Wells
p.91

Excited Shallow Impurity States in Quantum Well Structures: Correspondences between the Low-Field and High-Field Limits
p.99

Time Resolved Far Infra-Red Magnetospectroscopy in GaAs/AlGaAs MQWs
p.105

Polarized Luminescence Study of Shallow Acceptors in Short-Period Superlattices
p.111

Excited-State Spectroscopy of Shallow Donor Impurities in GaAs/AlGaAs Multi-Quantum Wells
p.117

HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Bound Excitons in Quantum Wells

Bound Excitons in Quantum Wells

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

91-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.91

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Online since:

January 1991

Authors:

K.K. Bajaj, D.C. Reynolds

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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