Paper Titles
Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
p.41
Electron-Hole Mechanism of Migration and Defect Interaction
p.47
Delta-Doping in III-V Semiconductors
p.53
Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
p.67
Photoluminescence and Excitation Study of Delta Doped GaAs
p.73
Shallow Impurity Bands in δ-Doped Quantum Wells
p.79
Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs
p.83
Bound Excitons in Quantum Wells
p.91
Excited Shallow Impurity States in Quantum Well Structures: Correspondences between the Low-Field and High-Field Limits
p.99

Photoluminescence and Excitation Study of Delta Doped GaAs

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Shallow Impurities in Semiconductors IV View Preview

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

73-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.73

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Online since:

January 1991

Authors:

J.C.M. Henning, Y.A.R.R. Kessner, Paul M. Koenraad, M.R. Leys, A.P.J. Voncken, W.C. van der Vleuten, J.H. Wolter

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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