Papers by Author: A.Q. Biddut

Abstract: This paper investigates the deformation in monocrystalline silicon subjected to single-point cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

Abstract: This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a higher pressure, 25 kPa, deterioration is slower, and the effective life of pads and MRR is enhanced.

Abstract: This paper experimentally investigates the micro-structural changes in mono-crystalline silicon induced by abrasive polishing with abrasive grain size and applied pressure. It was found that while the large abrasives of about 15 μm and 300 nm in diameter induce both residual amorphous phase and various residual crystalline structures and dislocations, the finer abrasives of about 50 nm in diameter only produce residual amorphous phase in the top subsurface of polished silicon. With the fine abrasives, reducing applied pressure reduces the amorphous layer thickness, and a damage-free polishing can be achieved at the pressure of 20 kPa.