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Articles by author: Alkyoni Mantzari

• A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
  Published in: Silicon Carbide and Related Materials 2008 (p331)
• Growth of Cubic Silicon Carbide Crystals from Solution
  Published in: Silicon Carbide and Related Materials 2005 (p123)
• Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2010 (p241)
• On the Twin Boundary Propagation in (111) 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2011 (p419)
• PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2004 (p319)
• Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
  Published in: Silicon Carbide and Related Materials 2010 (p20)
• Some Recent Results on the 3C-SiC Structural Defects
  Published in: Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications (p39)
• Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
  Published in: Silicon Carbide and Related Materials 2003 (p143)
• Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
  Published in: Silicon Carbide and Related Materials 2010 (p165)
• Structural Characterization of CF-PVT Grown Bulk 3C-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p67)
• Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
  Published in: Silicon Carbide and Related Materials 2009 (p175)
• TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
  Published in: Silicon Carbide and Related Materials 2009 (p383)
• TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy
  Published in: Applied Crystallography XXI (p97)
• The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p367)