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Articles by author: Andrei A. Istratov

• A Study of the Copper-Pair Related Centers in Silicon
  Published in: Defects in Semiconductors 19 (p467)
• DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p319)
• Gettering Strategies for SOI Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p547)
• Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p577)
• Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p175)
• Nature of Dislocation-Related Deep Level Defects in CdS
  Published in: Defects in Semiconductors 19 (p1359)
• Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p323)
• Precipitation of Iron in FZ and CZ Silicon
  Published in: Defects in Semiconductors 19 (p449)
• Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p577)
• Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p581)
• The Nature of the Electronic States of Cu₃Si-Precipitates in Silicon
  Published in: Beam Injection Assessment of Defects in Semiconductors (p369)