Articles by author: Andrew J. Trunek
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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Published in: Silicon Carbide and Related Materials 2005 (p279) -
SiC Growth by Solvent-Laser Heated Floating Zone
Published in: Silicon Carbide and Related Materials 2011 (p49) -
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
Published in: Silicon Carbide and Related Materials 2003 (p169) -
Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas
Published in: Silicon Carbide and Related Materials 2004 (p753)