Papers by Author: Antoon Theuwis

Paper TitlePage

173
Abstract: Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.
683
27
149
Showing 1 to 4 of 4 Paper Titles