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Articles by author: Atsushi Oshiyama

• Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
  Published in: Defects in Semiconductors 15 (p655)
• Bistability of Oxygen Vacancy in Silicon Dioxide
  Published in: Defects in Semiconductors 19 (p1479)
• Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
  Published in: Shallow Impurities in Semiconductors V (p75)
• First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN
  Published in: Defects in Semiconductors 18 (p981)
• Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
  Published in: Defects in Semiconductors 15 (p287)
• Positron Lifetime in Si Multivacancies
  Published in: Defects in Semiconductors 18 (p1135)
• Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy
  Published in: Defects in Semiconductors 16 (p469)
• Si/Ge Ordered Interface: Structure and Formation Mechanism
  Published in: Defects in Semiconductors 18 (p511)