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Papers by Author: Atsushi Oshiyama

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Bistability of Oxygen Vacancy in Silicon Dioxide

Authors: Atsushi Oshiyama

1479

First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN

Authors: Yoshihiro Okamoto, Mineo Saito, Atsushi Oshiyama

981

Positron Lifetime in Si Multivacancies

Authors: Mineo Saito, Atsushi Oshiyama

1135

Si/Ge Ordered Interface: Structure and Formation Mechanism

Authors: N. Ikarashi, Katsuhiro Akimoto, Atsushi Oshiyama, Tetsuo Tatsumi

511

Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon

Authors: O. Sugino, Atsushi Oshiyama

75

Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy

Authors: Osamu Sugino, Atsushi Oshiyama

469

Atomic Geometry and Its Stability of Oxygen Impurities in Silicon

Authors: M. Saito, Atsushi Oshiyama

655

Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs

Authors: Atsushi Oshiyama

287