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Articles by author: Barbara Surma

• Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
  Published in: High Pressure Technology of Nanomaterials (p285)
• Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p343)
• Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p393)
• Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p35)
• Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p169)
• Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p161)
• PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium
  Published in: Functional Nanomaterials for Optoelectronics and other Applications (p255)
• Properties of Si:Cr Annealed under Enhanced Stress Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p375)
• Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p351)