Papers by Author: Christophe Maleville

Abstract: Significant performance enhancements are offered by silicon on insulator (SOI) or strained silicon, SOI being adopted for advanced devices in sustaining Moore’s law. Sub-45 nm device options are including fully depleted (FD) devices, that are stressing even more specifications for thickness uniformity. Nano-uniformity, considering thickness variation contributions from device level to wafer scale, has been introduced in substrate optimization and latest Unibond products are verifying FD requirements. Rapid Thermal Processing (RTP) based surface smoothing has been introduced in Unibond processing to combine thickness control and product quality requirements.

Abstract: Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.