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Articles by author: E.R. Glaser

• Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
  Published in: Silicon Carbide and Related Materials 2007 (p389)
• Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p613)
• Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p497)
• Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p385)
• Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p625)
• Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
  Published in: Defects in Semiconductors 18 (p25)
• Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals
  Published in: Defects in Semiconductors 18 (p737)
• Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2007 (p429)
• High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
  Published in: Silicon Carbide and Related Materials 2007 (p103)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
  Published in: Silicon Carbide and Related Materials 2008 (p291)
• Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
  Published in: Defects in Semiconductors 16 (p793)
• Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p461)
• Optical and Magnetic Resonance Studies of Defects in GaN
  Published in: Defects in Semiconductors 18 (p9)
• Optically-Detected Magnetic Resonance of Donor States in Al_xGa_1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
  Published in: Defects in Semiconductors 16 (p775)