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Articles by author: Edward M. Sanchez

• Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p415)
• Electrical Characterization of Semi-Insulating 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p669)
• Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2001 (p35)
• Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p63)
• Structural Characterization of SiC Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p433)
• Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p435)
• Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p51)
• The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p71)
• The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p37)
• Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p55)