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Articles by author: Elias Muñoz Merino

• Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1425)
• DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
  Published in: Defects in Semiconductors 17 (p623)
• EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
  Published in: Defects in Semiconductors 14 (p335)
• Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
  Published in: Defects in Semiconductors 15 (p1115)
• Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
  Published in: Defects in Semiconductors 17 (p241)
• Introduction
  Published in: DX Centers (p1)
• Minimizing DX Center Effects in AlGaAs Based Devices
  Published in: DX Centers (p135)
• Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers
  Published in: Defects in Semiconductors 18 (p1309)
• Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
  Published in: Defects in Semiconductors 14 (p411)