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Articles by author: Eugenijus Gaubas

• Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p427)
• Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p347)
• Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p371)
• Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p539)
• Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p155)
• Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p229)
• Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p149)
• Nondestructive Characterisation of MOVPE-Grown CdTe and ZnTe Epilayers by Picosecond and Nanosecond 'Excite-Probe' Techniques
  Published in: Ultrafast Phenomena in Semiconductors (p111)
• On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p285)
• Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers
  Published in: Polycrystalline Semiconductors VII (p301)
• Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p155)