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Papers by Author: Gerhard Pensl

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Microstructure of Cubic SiC Grown by the Modified Lely-Method

Authors: M. Nerding, Kurt Semmelroth, Gerhard Pensl, Hiroyuki Nagasawa, Horst P. Strunk

147

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Authors: Evgenia V. Kalinina, G. Kholuyanov, Alla A. Sitnikova, V. Kossov, R. Yafaev, Gerhard Pensl, Sergey A. Reshanov, Andrey O. Konstantinov, Anders Hallén

637

Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures

Authors: Florin Ciobanu, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Sima Dimitrijev, K.Y. Cheong, Valeri V. Afanas'ev, Günter Wagner

551

Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation

Authors: Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl

477

Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers

Authors: Sergey A. Reshanov, O. Klettke, Gerhard Pensl, Wolfgang J. Choyke

459

Majority Traps Observed in H⁺- or He⁺-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Authors: Sergey A. Reshanov, O. Klettke, Gerhard Pensl

379

Electrical and Optical Characterization of SiC

Authors: Gerhard Pensl, Frank Schmid, Florin Ciobanu, Michael Laube, Sergey A. Reshanov, Norbert Schulze, Kurt Semmelroth, Adolf Schöner, Günter Wagner, Hiroyuki Nagasawa

365

Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy

Authors: John W. Steeds, G.A. Evans, S.A. Furkert, Lothar Ley, Martin Hundhausen, Norbert Schulze, Gerhard Pensl

305

Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method

Authors: Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, Siegmund Greulich-Weber, Johann Martin Spaeth

Oxidation of Silicon Carbide: Problems and Solutions

Authors: Valeri V. Afanas'ev, M. Bassler, Gerhard Pensl, Andre Stesmans

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