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Articles by author: H. Hofsäss

• As-Implanted Lattice Sites of Dopants in Semiconductors
  Published in: Defects in Semiconductors 14 (p1183)
• Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
  Published in: Vacancies and Interstitials in Metals and Alloys (p665)
• Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
  Published in: Defects in Semiconductors 15 (p1221)
• Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe
  Published in: Defects in Semiconductors 18 (p315)
• Lattice Sites of Li in Si and Ge
  Published in: Defects in Semiconductors 18 (p115)
• Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
  Published in: Defects in Semiconductors 19 (p899)