Papers by Author: H. Ohyama

Abstract: This paper reports experimental results on the production and annealing of oxygen-vacancy related (VO_n, 1<n<5) and carbon-related (C_iO_i, C_iO_iI, and C_iC_s) defects in Ge-doped Czochralski-grown silicon (Cz-Si) materials containing carbon. The samples were irradiated by 2 MeV fast electrons and the behavior of radiation-produced defects is studied by means of infrared (IR) spectroscopy, monitoring the relevant bands in spectra. Regarding the VO_n family, it was found that the presence of Ge affects the annealing temperature of VO defects as well as their fraction that is converted to VO₂ defects. Both effects are discussed in relation with an impact of Ge on the concentration of self-interstitials that take part in the annealing of VO defects via two reaction paths VO + I → O_i and VO + O_i → VO₂. Furthermore, two bands at 1037 and 1051 cm^-1 are attributed to the VO₅ defect, although three other bands at 762, 967 and 1005 cm^-1 are believed to be associated with V_nO_m clusters containing carbon, most likely having a VO_nC_s structure. Regarding carbon-related complexes, it has been established that the annealing of the 862 cm^-1 band belonging to the C_iO_i defect is accompanied by the emergence of the 1048 cm^-1 band previously assigned to the C_sO_2i center. The evolution of the C_iC_s and the C_iO_iI bands is monitored and the identification of bands at 947, 967 and 1020 cm^-1 making their appearance in IR spectra over the temperature range where C_iC_s and C_iO_iI defects are annealed out is discussed.

Abstract: We present infrared (IR) spectroscopy measurements on carbon-rich, germanium-doped Czochralski-grown (Cz-Si) subjected to irradiation with 2 MeV electrons. The study is focused on the effect of germanium doping on the production of carbon-related defects CiCs, CiOi and CiOi(SiI). For carbon concentrations [Cs] up to 11017 cm-3 the production of the defects increases with the increase of Ge content, for [Ge] up to 11020 cm-3. However, for carbon concentrations around 21017 cm-3 the production of these defects shows a decrease for samples with [Ge]=21020 cm-3 in comparison with those of [Ge]=21019 cm-3. The results are discussed taking into account the effect of germanium on the annihilation of vacancies and self-interstitials in the course of irradiations. In the first case, due to the temporary trapping of vacancies by Ge atoms in the course of irradiation, more self-interstitials are available for the production of carbon interstitials (Cs+ SiI Ci), leading finally to an increase of the carbon-related defects. In the second case, and for [Ge] of the order of ~1020 cm-3 or higher, Ge atoms tend to form large clusters. These clusters attract primary defects facilitating their annihilation on them. As a result, the availability of self-interstitials decreases, which finally leads to a decrease of the carbon-related defects.

Abstract: We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subjected to thermal treatments at 1000oC and 1130oC with or without the application of high hydrostatic pressure of ~ 11 Kbars, prior to irradiation. The work is primarily focused on the impact of the pre-treatments on the production rate of the VO defect and its conversion to the VO2 defect. To this end, IR spectroscopy measurements were carried out and the amplitudes of the VO band (830 cm-1) and the VO2 band (888 cm-1) were monitored in the course of an isochronal anneal sequence up to ~ 550oC. Thermal treatments at 1000oC result in a reduction of the production rate of the VO defect. This rate however increases when pressure is applied during the treatment. The opposite behavior is observed for thermal treatments at 1130oC. The production rate of the VO increases slightly in heat treated samples but decreases substantially when high pressure is applied. Similar trends show the conversion of the VO to the VO2 defect for the corresponding treatments. The results are discussed taking into account the oxygen precipitates formed at the various treatments and their impact on the amount of primary defects available during irradiation which affects the production of the vacancy-oxygen defects.

Abstract: The degradation and recovery behavior of device performance on GaAlAs LEDs (Light emitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reverse current increases after irradiation, while the capacitance decreases. The device performance degradation is proportional with fluence. For electron irradiation, fluence rate is also effective for degradation. Low fluence rate shows more large degradation compared to high fluence rate resulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate, and this spectrum increases with fluence. The radiation damage of proton is larger than that of electron irradiation, which is caused by the difference of mass and possibility of nuclear collision for the formation of lattice defects. After irradiation, the device performance recovers by thermal annealing.