Papers by Author: Hans Joachim Müssig

Abstract: Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

Abstract: Requirements and applications for three different scenarios in material science of microelectronics are discussed. Dimension scaling continous at the same pace (More Moore) by changing to immersion lithography and later to extreme ultraviolet lithography. The functionality of system on chip solutions will be increased by heterogeneous technologies combined with a microelectronics core ( More than Moore). Material science and physical understanding of new device principles started well in advance to judge difficulties and options. The strong links to economy are illustrated by a simple model of exponential growth.