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Articles by author: Heiner Ryssel

• 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p734)
• Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p621)
• Barium, Strontium and Bismuth Contamination in CMOS Processes
  Published in: Ultra Clean Processing of Silicon Surfaces V (p9)
• Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
  Published in: Silicon Carbide and Related Materials 2009 (p681)
• Complementary Metrology within a European Joint Laboratory
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p97)
• Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
  Published in: Silicon Carbide and Related Materials 2010 (p382)
• Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
  Published in: Silicon Carbide and Related Materials 2008 (p521)
• Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
  Published in: Silicon Carbide and Related Materials 2005 (p827)
• High Temperature Implantation of Aluminum in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p587)
• Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
  Published in: Silicon Carbide and Related Materials 2007 (p597)
• Investigation of Rapid Thermal Annealed pn-Junctions in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1073)
• Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
  Published in: Silicon Carbide and Related Materials 2003 (p973)
• NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
  Published in: Silicon Carbide and Related Materials 2009 (p1143)
• Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p349)
• Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p373)