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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Henrik Pedersen
15 papers on 1 page:
1
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
Published in:
Silicon Carbide and Related Materials 2006
(p53)
Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
Published in:
Silicon Carbide and Related Materials 2011
(p109)
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
Published in:
Silicon Carbide and Related Materials 2010
(p59)
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Published in:
Silicon Carbide and Related Materials 2011
(p113)
Chloride-Based SiC Epitaxial Growth
Published in:
Silicon Carbide and Related Materials 2008
(p89)
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
Published in:
Silicon Carbide and Related Materials 2008
(p373)
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
Published in:
Silicon Carbide and Related Materials 2006
(p97)
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
Published in:
Silicon Carbide and Related Materials 2008
(p81)
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Published in:
Silicon Carbide and Related Materials 2008
(p93)
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Published in:
Silicon Carbide and Related Materials 2007
(p107)
Metastable Defects in Low-Energy Electron Irradiated
n
-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2009
(p435)
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2010
(p249)
Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
Published in:
Silicon Carbide and Related Materials 2008
(p401)
Thick Epilayer for Power Devices
Published in:
Silicon Carbide and Related Materials 2006
(p47)
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
Published in:
Silicon Carbide and Related Materials 2007
(p115)
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