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Papers by Author: Hiroshi Harima

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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Authors: Eiji Kurimoto, M. Hangyo, Hiroshi Harima, Kenji Kisoda, Taro Nishiguchi, Shigehiro Nishino, Shinichi Nakashima, Masakazu Katsuno, Noboru Ohtani

621

Ultrafast Electron Relaxation Processes in SiC

Authors: Takuro Tomita, S. Saito, T. Suemoto, Hiroshi Harima, Shinichi Nakashima

641

A Raman Study of Metal-SiC Interface Reactions

Authors: Eiji Kurimoto, Hiroshi Harima, Tadao Toda, Minoru Sawada, Shinichi Nakashima, Motohiro Iwami

637

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Authors: Shinichi Nakashima, Yasuhiro Nakatake, Y. Yano, Hiroshi Harima, Noboru Ohtani, Masakazu Katsuno

633

Carrier Density Evaluation in P-Type SiC by Raman Scattering

Authors: Hiroshi Harima, Toru Hosoda, Shinichi Nakashima

607

Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe

Authors: Hiroshi Harima, Toru Hosoda, Shinichi Nakashima

603

Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition

Authors: Shinichi Nakashima, Hiroshi Harima, Takuro Tomita, T. Suemoto

591

Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆

Authors: Yasuichi Masuda, Yi Chen, Hideharu Matsuura, Hiroshi Harima, Shigehiro Nishino

711

Polytype and Defect Control of Two Inch Diameter Bulk SiC

Authors: Makato Sasaki, Hiromu Shiomi, Hiroshi Harima, Shigehiro Nishino

485

Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy

Authors: Tomoaki Furusho, K. Matsumoto, Hiroshi Harima, Shigehiro Nishino

217