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Articles by author: Hirotaka Yamaguchi

• Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
  Published in: Silicon Carbide and Related Materials 2008 (p251)
• Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
  Published in: Silicon Carbide and Related Materials 2007 (p321)
• Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2000 (p295)
• Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
  Published in: Silicon Carbide and Related Materials 2007 (p313)
• EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2008 (p707)
• Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
  Published in: Silicon Carbide and Related Materials 2011 (p789)
• Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
  Published in: Silicon Carbide and Related Materials - 1999 (p103)
• Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2001 (p87)
• High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
  Published in: Silicon Carbide and Related Materials 2003 (p29)
• In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
  Published in: Silicon Carbide and Related Materials - 1999 (p457)
• Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p309)
• Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2001 (p447)
• SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
  Published in: Silicon Carbide and Related Materials - 1999 (p75)
• TEM Observation of SiO₂/4H-SiC Hetero Interface
  Published in: Silicon Carbide and Related Materials 2007 (p671)
• Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p683)