Papers by Author: I.E. Kotenko

Abstract: Processes involved in the structure and phase formation in the thin film systems Sn(4 nm)/Cu(14 nm) and Сu(14 nm)/Sn(8 nm) in the temperature range 130-500 оС were studied using “in situ” electron imaging and Transmission Electron Microscopy methods (TEM). Solubility of Sn α – solid solution Cu-Sn has been determined from the changes in the lattice parameter. This work was performed in the framework of the Swedish Institute supported cooperative research project “Thin metal films – the interplay of structure diffusion and boundaries” (SI dnr 00699/2009).

Abstract: Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epitaxial NiSi2 nuclei at separate spots of NiSi/Si(001) interface; regular growth of NiSi2 phase inclusions at the expense of NiSi layer “diffusion dissolution”; a formation of NiSi2 spherical inclusions in the lattice of Si matrix and their coalescence.

Abstract: Low-temperature diffusion in thin films of the stable isotopes, 56Fe/57Fe, was studied by applying secondary ion mass spectrometry (SIMS). Processing of the concentration profiles obtained was done by using the Hall – Morabitto “median gradient” method. The bulk and intergrain selfdiffusion coefficients were determined.