Papers by Author: Israel J.R. Baumvol

Abstract: The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

Abstract: The mechanisms of oxygen incorporation during dry thermal oxidation of 6H-SiC wafers were investigated. Isotopic tracing of oxygen was performed by sequential oxidations in dry O2 enriched or not in the 18O isotope and subsequent determinations of the 18O profiles. The results obtained with SiC substrates were compared with those of Si, evidencing different mechanisms of oxygen incorporation and transport. The gradual nature of the SiO2/SiC interface was also evidenced. A probable explanation for this gradual SiO2/SiC interface is shown to be the formation of C clusters during oxidation.