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Articles by author: J. Jun

• Distribution Function for the Activation Volume of the Discontinuous Precipitation Reaction in the Cu – 7.5 at.% In Alloy
  Published in: Intergranular and Interphase Boundaries in Materials (p605)
• Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p345)
• Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p393)
• Free Electrons and Resonant Donor State in Gallium Nitride
  Published in: Defects in Semiconductors 18 (p23)
• High Pressure Dependence of the Discontinuous Ordering (DO) Reaction in the Fe – 50% at. Co Alloy
  Published in: High Pressure Effects in Chemistry, Biology and Materials Science (p217)
• Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p115)
• Kinetics of Intermetallic Growth under High Pressure
  Published in: Defects and Diffusion in Metals (p1)
• Luminescence of Doped and Undoped Bulk Crystals of GaN
  Published in: Defects in Semiconductors 18 (p43)