Papers by Author: Jean Bernardini

Abstract: Atom redistribution during crystallization of a B and P co-doped amorphous Si layer produced by Si and P chemical vapor co-deposition and B implantation has been investigated. The crystallization of the entire layer is quasi-instantaneous for annealing temperature greater than 650 °C. The crystallization rate is well reproduced by the Avrami-Johnson-Mehl-Kolmogorov model of transformation. The Avrami n is found equal to 4, which is corresponding to 3D bulk crystallization. Crystallization promotes a non-Fickian redistribution of B atoms, allowing for an abrupt interface between B-doped and B-undoped regions. After crystallization, B diffuses in the polycrystalline Si layer for concentrations lower than 1.5  1020 at cm3 via the type B kinetic regime. Crystallization has no significant (or detectable) influence on the P profile. For temperatures higher than 750 °C, P diffuses in the poly-Si layer towards the region of highest B concentration via the type B kinetic regime, leading to P uphill diffusion. This phenomenon can be simulated considering chemical interactions between B and P atoms in both grains and grain boundaries.

Abstract: Classically a master curve as Dorn's equation is applied for elucidating stationary creep behaviour within high temperature range (T > 0.6 Tm). As the diffusion of both 63Ni and 44Ti have been measured in an equiatomic NiTi, an effective choice of creep-relevant diffusion coefficient D may be possible. Moreover, creep measurements in the same temperature range performed can be found in the literature. The correlation does not permit to establish precisely what D coefficient to integrate in the Dorn's equation.

Abstract: The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.

Abstract: We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.

Abstract: The dielectric breakdown strengths of two series of sintered alumina samples of low and high impurity content (where Si is the dominant element with, respectively, 90 and 1500 ppm) and impurity level (25 ppm of Si and 12 ppm of Ti) are compared with positron lifetime measurements. The dielectric breakdown strength of sintered alumina is found higher than that of single crystal. This improvement is stronger when silicon is the only major foreign element. If, in addition to SiO2, MgO and CaO are present in substantial amounts, the improvement is lessened. This is attributed to the enhanced bulk solubility of Si. These results are discussed by calling for the potential traps for positrons and electrons that are located at grain boundaries. It is deduced that the improvement of the dielectric breakdown strength stems from the consequences of Si segregation at grain boundaries via electron trapping in shallow traps, which are likely the x '' Al • Al ) V : (3Si clusters.

Abstract: Grain-boundary heterodiffusion of iron in pure copper and self diffusion of iron in copper–0.091at% iron were measured by the serial sectioning technique in the Harrison B-regime. The penetration profiles corresponding to iron heterodiffusion in pure copper show a strong positive curvature far beyond the (Dvt)1/2 depth . This peculiar shape, which does not exist for self diffusion in the solid solution, proves the presence of a strong non linear grain-boundary segregation of iron in copper in spite of the respective surface energies of these metals. This segregation is linked to the size effect which is, as predicted by numerical simulation, the main driving force for grainboundary segregation.