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Articles by author: Jean François Barbot

• A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p357)
• Cavities in He-Implanted SiC
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p533)
• Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
  Published in: Defects and Diffusion in Semiconductors (p37)
• Co-Germanide Schottky Contacts on Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p107)
• Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p101)
• Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
  Published in: Silicon Carbide and Related Materials 2003 (p937)
• Defects Created by Helium Implantation at Different Temperatures in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p285)
• Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p319)
• Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p141)
• Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p721)
• Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p371)
• Helium Implantation Damage in SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p709)
• Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p845)
• LACBED Investigations of High Energy Helium Implanted into 4H-SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p331)
• On the Effect of Lead on Irradiation Induced Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p373)