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Articles by author: Jean Luc Demenet

• Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
  Published in: Silicon Carbide and Related Materials - 1999 (p517)
• Dislocation Activity in 4H-SiC in the Brittle Domain
  Published in: Silicon Carbide and Related Materials 2009 (p335)
• Modifications of an Internal Friction Apparatus for the Study of Dislocation Motion in Semiconductors
  Published in: Defects and Diffusion in Ceramics (p175)
• Study of an Al Composite Reinforced with Nanometric SiC Particles, Produced by Mechanical Alloying
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials (p763)
• TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C
  Published in: Silicon Carbide and Related Materials 2003 (p343)
• The Brittle-to-Ductile Transition in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p767)
• The Role of Dislocations in the Plastic Behavior of Silicon Nitride A Review
  Published in: Defects and Diffusion in Ceramics (p23)