Papers by Author: Jian Jun Li

Abstract: CuIn1-xGaxSe2 (CIGS) precursor films were fabricated on Mo foils by one-step electrodeposition in water and alcohol solutions. The precursor films were annealed in Ar atmosphere at 450°C to synthesize the polycrystalline thin films. The current density vs. potential curves of Cu2+, In3+, Ga3+ and Se4+ was studied by cyclic voltammetry. The compositions of CIGS, were analyzed by energy dispersive X-ray spectrum. The morphology and phase structure of films was characterized by scanning electron microscopy and X-ray diffraction, respectively.

Abstract: CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity.

Abstract: According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.