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Papers by Author: K. Moore

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Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Authors: B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, William M. Vetter, Michael Dudley, K. Moore, T. Gehoski

455

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC

Authors: B.J. Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, D. Ganser

1029

Effect of Device Temperature on RF FET Power Density

Authors: C. Weitzel, L. Pond, K. Moore, M. Bhatnagar

969

Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's

Authors: K. Moore, M. Bhatnagar, C. Weitzel, L. Pond, T. Gehoski, T. Chatham

957

Cryogenic Treatment of Three Heat-Treated Tool Steels

Authors: K. Moore, D.N. Collins

47