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Papers by Author: Katsunori Ueno

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Comparison of 600V Si, SiC and GaN Power Devices

Authors: Sauvik Chowdhury, Zachary Stum, Zhong Da Li, Katsunori Ueno, T. Paul Chow

Abstract: In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Authors: Syunsuke Izumi, Hiroyuki Fujisawa, Takeshi Tawara, Katsunori Ueno, M. Hiraoka

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Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes

Authors: Hiroyuki Fujisawa, Takashi Tsuji, Syunsuke Izumi, Katsunori Ueno, Isaho Kamata, T. Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Authors: Takashi Tsuji, Syunsuke Izumi, A. Ueda, Hiroyuki Fujisawa, Katsunori Ueno, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi

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Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers

Authors: Takashi Tsuji, R. Asai, Katsunori Ueno, Shinji Ogino

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Channel Doped SiC-MOSFETs

Authors: Shinji Ogino, Tadaaki Oikawa, Katsunori Ueno

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Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC

Authors: Katsunori Ueno

845

Positron Annihilation Lifetime Study of Irradiated and Deformed Ni

Authors: Katsunori Ueno, M. Ohmura, M. Kimura, Yasushi Kamimura, M. Takenaka, T. Tsutsumi, Kunitaka Ohsawa, A. Kaniava, Eiichi Kuramoto

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