Papers by Author: Kenshiro Nakashima

Paper TitlePage

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Authors: Takeshi Ohshima, Akira Uedono, Osamu Eryu, Kin Kiong Lee, Koji Abe, Hisayoshi Itoh, Kenshiro Nakashima
633
A New Type of SiC Gas Sensor with a pn-Junction Structure
Authors: Kenshiro Nakashima, Yasuo Okuyama, Shinji Ando, Osamu Eryu, Koji Abe, H. Yokoi, T. Oshima
1427
Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces
Authors: Koji Abe, M. Sumitomo, T. Sumi, Osamu Eryu, Kenshiro Nakashima
909
Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC
Authors: Osamu Eryu, Daisuke Matsuo, Koji Abe, Kenshiro Nakashima
843
Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon
Authors: Kenshiro Nakashima
219
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